About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Submonolayer sodium coverage of the Si-Sio2 interface
Abstract
It is well known that fractional monolayers of sodium can be electrolytically deposited on the Si-SiO2 interface, but the resulting electronic structure has not been fully determined. We present thermionic emission and photoemission measurements of uniformly coated interfaces which clearly show a reduction of the contact barrier due to an interface dipole layer. The photoelectric threshold, determined by the photoyield corrected for optical absorption Y/α, is reduced by sodium to a saturation value of 2.6 eV at a full monolayer coverage. This is consistent with the thermionic emission results which show an electronic barrier of 2.7 eV at the full monolayer coverage. A simple mathematical model is given to explain this dipole layer. © 1974 The Japan Society of Applied Physics.