A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
We have investigated the strain effects on the effective channel mobility of InGaAs pseudo (Ψ) n-MOSFETs by means of mechanical beam bending technique. For this goal, III-V heterostructures were grown on InP and transferred onto Si by direct wafer bonding. We show that an increase in electron mobility of up to 70% can be achieved under tensile strain. Simulations of InGaAs band-structure parameters under strain suggest that in the present case mobility enhancement is due to an increase of the sheet carrier density rather than to a decrease of the effective mass. © 2014 Elsevier Ltd. All rights reserved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008