S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
We have investigated the strain effects on the effective channel mobility of InGaAs pseudo (Ψ) n-MOSFETs by means of mechanical beam bending technique. For this goal, III-V heterostructures were grown on InP and transferred onto Si by direct wafer bonding. We show that an increase in electron mobility of up to 70% can be achieved under tensile strain. Simulations of InGaAs band-structure parameters under strain suggest that in the present case mobility enhancement is due to an increase of the sheet carrier density rather than to a decrease of the effective mass. © 2014 Elsevier Ltd. All rights reserved.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
T. Schneider, E. Stoll
Physical Review B
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials