Roughness analysis of Si1-xGex films
R.M. Feenstra, M.A. Lutz, et al.
MRS Fall Meeting 1994
Synchrotron-based O 1s and N 1s photoabsorption spectroscopy, O 1s, N 1s, Si 2p, and valence-band photoelectron spectroscopy (PES), and medium energy ion scattering (MEIS) have been used to determine the composition and thickness of oxynitride films grown in N2O on a Si(100) surface. Core-level photoabsorption spectroscopy is shown to be a very sensitive probe capable of measuring surface coverages lower than 0.1 monolayers of N (6.5×10 13 N atoms/cm2). Film composition was monitored as a function of growth to demonstrate the stoichiometry reversal from primarily N-terminated surfaces in thin films to nearly pure SiO2 in films thicker than ∼20 Å. A sample with a 60 Å oxynitride film was depth profiled by etching in HF and was shown, via N 1s absorption spectroscopy, to have N segregation within 10 Å above the Si/SiO2 interface. Core-level PES and MEIS were used to study the growth mechanisms of oxynitrides on Si(100) and these data were used to create a schematic phase diagram showing three distinct regions of oxide formation. A critical N2O pressure was discovered at which oxide growth proceeds at over 1000 times its normal rate. © 1995 American Institute of Physics.
R.M. Feenstra, M.A. Lutz, et al.
MRS Fall Meeting 1994
R. Jammy, V. Narayanan, et al.
ISTC 2005
M. Copel, R.M. Tromp
Surface Science
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting