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Paper
Single electron calculations for the Si L2, 3 near edge structure
Abstract
We show, for the first time, that the near edge structure of the crystalline silicon L2, 3 edge in absorption spectroscopy at an energy resolution of 0.3 eV can be largely explained without invoking many-body effects, or core excitons. Previous attempts to compare experimental results with total density of final states, without matrix element weighting, have lead to erroneous interpretations. © 1990.