Publication
Solid State Communications
Paper

Single electron calculations for the Si L2, 3 near edge structure

View publication

Abstract

We show, for the first time, that the near edge structure of the crystalline silicon L2, 3 edge in absorption spectroscopy at an energy resolution of 0.3 eV can be largely explained without invoking many-body effects, or core excitons. Previous attempts to compare experimental results with total density of final states, without matrix element weighting, have lead to erroneous interpretations. © 1990.

Date

01 Jan 1990

Publication

Solid State Communications

Authors

Topics

Share