David B. Mitzi, Matthew Copel, et al.
TFTT 2004
This letter reports a charge transfer p -doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the "ON-" and "OFF-" transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2-3 orders of magnitude, the device OFF current is suppressed and an excellent Ion Ioff ratio of 106 is obtained. The important role played by metal-nanotube contacts modification through charge transfer is demonstrated. © 2005 American Institute of Physics.
David B. Mitzi, Matthew Copel, et al.
TFTT 2004
Jia Chen, Marcus Freitag, et al.
FNANO 2005
Jia Chen, Vasili Perebeinos, et al.
Science
Joseph Abel, Akitomo Matsubayashi, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics