J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Paper
Resonant tunneling via localized states in thin MOS structures
Abstract
MOSFET samples were fabricated with Na+ ions in the gate oxide. Large peaks in the tunneling conductivity through the oxide were observed which are interpreted as resonant tunneling of electrons via the localized Na+ impurities. The localized sites are believed to arise from Na+ decoration of intrinsic defects in the oxide. © 1986.
Related
Ronald Troutman
Synthetic Metals
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
H.D. Dulman, R.H. Pantell, et al.
Physical Review B