Resonant Raman scattering in a semiconductor superlattice

Abstract

We report the observation of enhancement in the Raman cross section for photon energies near electronic resonance in GaAsGa1-xAlxAs superlattices of a variety of configurations. Both the energy positions and the general shape of the resonant curves agree with those derived theoretically based on the two-dimensionality of the quantum states in such superlattices. Polarization studies indicate a major contribution to the scattering from forbidden processes. © 1976 The American Physical Society.