Publication
IEEE Electron Device Letters
Paper

Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

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Abstract

Near InfraRed (NIR) photon emission is observed from filaments in HfO2 Resistive Random Access Memories (ReRAMs). This technique is non-destructive and offers rapid localization of filaments, enabling statistical analysis of their spatial distribution. We show that the emission is electric-field driven. We also report direct experimental evidence of ${i}$ ) completely random spatial distribution of filaments across multiple devices and ii) formation of multiple filaments inside a single large device.

Date

01 Jun 2021

Publication

IEEE Electron Device Letters

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