Photon Emission Microscopy of Amorphous HfO2 ReRAM Cells
Franco Stellari, Leonidas E. Ocola, et al.
IPFA 2022
With decreasing SiO2 interfacial-layer (IL) thickness, gate currents in SiO2HfO2 dual-layer gate stacks are observed to undergo drastic changes. For an IL thickness below 3 AA, a transition from hole-current-dominated transport to electron-current-dominated transport is observed near operating bias conditions in p-channel field-effect transistors. A tunneling simulation based on the transfer-matrix approach suggests that the band offsets for the SiO2 and HfO2 layers are reduced in the submonolayer IL regime < 3 AA;, promoting the transition in the conduction mechanism. © 2011 IEEE.
Franco Stellari, Leonidas E. Ocola, et al.
IPFA 2022
Takashi Ando, Pouya Hashemi, et al.
IEEE Electron Device Letters
Franco Stellari, Ernest Y. Wu, et al.
Microelectronics Reliability
Samarth Agarwal, Kai Xiu, et al.
Journal of Computational Electronics