Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
A study of the relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified (CA) resists was performed. The degree of cleavage occurring under plasma etching conditions was greatly affected by the activation energy of the deprotection reaction. The extent of deprotection was directly influenced by the nature or acidity of the plasma chemistry. Acid plasma induced deprotection and exposure of photoacid generators (PAG) within the etch chambers were two mechanisms during the deprotection. Etch rate in all cases were considered linear and the deprotection-related film thickness loss was insignificant.
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering