Reading and writing of photochemical holes using GaAlAs-diode lasers

Abstract

A current-tuned GaAlAs-diode laser is utilized both to burn and to detect narrow photochemical holes in the inhomogeneously broadened 833-nm zero-phonon line of the R’ color center in LiF. Applications for reading and writing data into frequency-domain optical memories based on photochemical hole burning are discussed. © 1983 Optical Society of America.