Publication
Optics Letters
Paper

Reading and writing of photochemical holes using GaAlAs-diode lasers

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Abstract

A current-tuned GaAlAs-diode laser is utilized both to burn and to detect narrow photochemical holes in the inhomogeneously broadened 833-nm zero-phonon line of the R’ color center in LiF. Applications for reading and writing data into frequency-domain optical memories based on photochemical hole burning are discussed. © 1983 Optical Society of America.

Date

01 May 1983

Publication

Optics Letters

Authors

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