About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Radiochemical determination of damage profiles in silicon
Abstract
A novel technique for the study of structural damage incurred by single crystal silicon targets during ion implantation is described. The method is based upon copper- decoration of the vacancy rich damaged region, followed by radiochemical measurement of the resulting copper distribution. Both the neutron activation and radiotracer modifications of the technique yield damage profiles which are significantly shallower than the corresponding implanted impurity profiles.