Publication
Radiation Effects
Paper

Radiochemical determination of damage profiles in silicon

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Abstract

A novel technique for the study of structural damage incurred by single crystal silicon targets during ion implantation is described. The method is based upon copper- decoration of the vacancy rich damaged region, followed by radiochemical measurement of the resulting copper distribution. Both the neutron activation and radiotracer modifications of the technique yield damage profiles which are significantly shallower than the corresponding implanted impurity profiles.

Date

13 Sep 2006

Publication

Radiation Effects

Authors

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