PaperSelf-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in siliconF.F. Morehead, N.A. Stolwijk, et al.Applied Physics Letters
PaperSelf-compensation-limited conductivity in binary semiconductors. III. Expected correlations with fundamental parametersG. Mandel, F.F. Morehead, et al.Physical Review
PaperCircular etch pits in ion-implanted amorphous silicon filmsK.N. Tu, S.I. Tan, et al.Applied Physics Letters
PaperModel for the formation of amorphous Si by ion bombardmentF.F. Morehead, B.L. CrowderRadiation Effects
