PaperExact description and data fitting of ion-implanted dopant profile evolution during annealingR. Ghez, G.S. Oehrlein, et al.Applied Physics Letters
PaperOn the nature of point defects and the effect of oxidation on substitutional dopant diffusion in siliconT.Y. Tan, U. Gösele, et al.Applied Physics A Solids and Surfaces
PaperIon Implantation Doping of Si with 70 to 300 keV B. P. and AsB.L. Crowder, F. FairfieldIEEE T-ED
PaperDistribution of damage produced by ion implantation of silicon at room temperatureB.L. Crowder, R.S. TitleRadiation Effects
