Distribution of damage produced by ion implantation of silicon at room temperature
- B.L. Crowder
- R.S. Title
- 2006
- Radiation Effects
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3 results at Radiation Effects
Model for the formation of amorphous Si by ion bombardment
- F.F. Morehead
- B.L. Crowder
- 2006
- Radiation Effects
PaperRadiochemical determination of damage profiles in silicon
- B.J. Masters
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- et al.
- 2006
- Radiation Effects
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