Measurements of the rectifying barrier heights of the various iridium silicides with n-Si

Abstract

The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Ir, IrSi, IrSi1.75, and IrSi3 have been determined by means of photoresponse, capacitance, and forward I/V measurements. In all cases the barrier height values are quite high, in excess of 0.85 eV. For Ir, IrSi, and IrSi1.75 the values obtained agree with values previously derived from forward I/V curves.