J.F. Ziegler, B.L. Crowder
Applied Physics Letters
The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Ir, IrSi, IrSi1.75, and IrSi3 have been determined by means of photoresponse, capacitance, and forward I/V measurements. In all cases the barrier height values are quite high, in excess of 0.85 eV. For Ir, IrSi, and IrSi1.75 the values obtained agree with values previously derived from forward I/V curves.
J.F. Ziegler, B.L. Crowder
Applied Physics Letters
K.N. Tu, P. Chaudhari, et al.
Journal of Applied Physics
B.L. Crowder, G.D. Pettit
Physical Review
Albert J. Blodgett, B.L. Crowder
International Electronic Manufacturing Technology Symposium 1987