N.J. Chou, B.L. Crowder
Journal of Applied Physics
The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Ir, IrSi, IrSi1.75, and IrSi3 have been determined by means of photoresponse, capacitance, and forward I/V measurements. In all cases the barrier height values are quite high, in excess of 0.85 eV. For Ir, IrSi, and IrSi1.75 the values obtained agree with values previously derived from forward I/V curves.
N.J. Chou, B.L. Crowder
Journal of Applied Physics
J.E. Smith Jr., M.H. Brodsky, et al.
Physical Review Letters
S.I. Tan, B.S. Berry, et al.
Applied Physics Letters
J.E. Smith Jr., M.H. Brodsky, et al.
Journal of Non-Crystalline Solids