Publication
Applied Physics Letters
Paper

Radiative lifetime in GaAs1-xPx p-n junctions

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Abstract

The radiative lifetime in GaAs1-xPx light-emitting diodes is observed to increase from 2 to 11 nsec with increasing injection level. A related increase in quantum efficiency is also observed. These observations are explained by using a trap-filling model, where the traps arise from defects in the epitaxially grown GaAs1-xPx. © 1973 American Institute of Physics.

Date

09 Oct 2003

Publication

Applied Physics Letters

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