Radiative lifetime in GaAs_1-xP_x p-n junctions

Abstract

The radiative lifetime in GaAs1-xPx light-emitting diodes is observed to increase from 2 to 11 nsec with increasing injection level. A related increase in quantum efficiency is also observed. These observations are explained by using a trap-filling model, where the traps arise from defects in the epitaxially grown GaAs1-xPx. © 1973 American Institute of Physics.