Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Smiconducting single crystals of GaAs with resistivities ranging between 0.5. and 103 Ω-cm have been obtained by heat treating high purity, semi-insulating GaAs grown in the presence of Ga2O in a quartz system. The presence of Ga2O vapor during growth reduces Si contamination, and the subsequent heat treatment apparently removes unidentified acceptors from the lattice. © 1966.