Preparation of 0.5-10³ Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystals

Smiconducting single crystals of GaAs with resistivities ranging between 0.5. and 103 Ω-cm have been obtained by heat treating high purity, semi-insulating GaAs grown in the presence of Ga2O in a quartz system. The presence of Ga2O vapor during growth reduces Si contamination, and the subsequent heat treatment apparently removes unidentified acceptors from the lattice. © 1966.