J.A. Barker, D. Henderson, et al.
Molecular Physics
Paper
Preparation of 0.5-103 Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystals
Abstract
Smiconducting single crystals of GaAs with resistivities ranging between 0.5. and 103 Ω-cm have been obtained by heat treating high purity, semi-insulating GaAs grown in the presence of Ga2O in a quartz system. The presence of Ga2O vapor during growth reduces Si contamination, and the subsequent heat treatment apparently removes unidentified acceptors from the lattice. © 1966.