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Solid State Communications
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Preparation of 0.5-103 Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystals

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Abstract

Smiconducting single crystals of GaAs with resistivities ranging between 0.5. and 103 Ω-cm have been obtained by heat treating high purity, semi-insulating GaAs grown in the presence of Ga2O in a quartz system. The presence of Ga2O vapor during growth reduces Si contamination, and the subsequent heat treatment apparently removes unidentified acceptors from the lattice. © 1966.

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Solid State Communications

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