A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Paper
Preparation of 0.5-103 Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystals
Abstract
Smiconducting single crystals of GaAs with resistivities ranging between 0.5. and 103 Ω-cm have been obtained by heat treating high purity, semi-insulating GaAs grown in the presence of Ga2O in a quartz system. The presence of Ga2O vapor during growth reduces Si contamination, and the subsequent heat treatment apparently removes unidentified acceptors from the lattice. © 1966.
Related
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Peter J. Price
Surface Science
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications