The results os of a systematic study of the resistivity of some metal-silicon (with metals such as cobalt, chromium, molybdenum, nickel, titanium and tungsten and metal-insulator (with metals such as aluminum, chromium, nickel and titanium) films are reported as a function of the fraction of metal in the film composition. All the materials were made by the electron beam evaporation process, using either dual-electron-beam or reactive evaporation (for AlAl2O3 and SnSnO2 films). A variation of almost three orders of magnitude in resistivity was obtained by changing the composition of some of these films. The SnSnO2 films, made by reactive evaporation, have an advantage in fabrication in not having a strong dependence of resistivity on composition, thereby relaxing the requirements on the control of oxygen pressure during deposition. Therefore, it is the preferred choice for resistive ribbon application. © 1988.