Porosity in plasma enhanced chemical vapor deposited SiCoH dielectrics: A comparative study

Abstract

The study of porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics was presented. It was found that the SiCOH films with k = 2.8 had no detectable porosity. It was shown that the pore size increases with decreasing k, however the diameter remains below 5 nm for k = 2.05, most of the pores being smaller than 2.5 nm.