ACS Spring 1999
Conference paper

Polymer chemistry considerations in the design of robust 193 nm photoresists


Cyclic olefin polymer chemistry is studied for the design of next-generation photoresists with a better etch resistance than the currently used for semiconductor production. The material properties and chemistry from the synthesis of 193 nm resist polymers from several polymerization mechanisms are presented including metal-catalyzed addition polymerization of substituted norbonene monomers.