About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ACS Spring 1999
Conference paper
Polymer chemistry considerations in the design of robust 193 nm photoresists
Abstract
Cyclic olefin polymer chemistry is studied for the design of next-generation photoresists with a better etch resistance than the currently used for semiconductor production. The material properties and chemistry from the synthesis of 193 nm resist polymers from several polymerization mechanisms are presented including metal-catalyzed addition polymerization of substituted norbonene monomers.