Yvonne Anne Pignolet, Stefan Schmid, et al.
Discrete Mathematics and Theoretical Computer Science
Photolithography using 193-nm light appears to be a viable route for the extension of optical lithography to the dimensions required for the manufacture of 1Gb DRAM and advanced CMOS microprocessors with 180-140-nm minimum feature sizes. In this paper, we discuss the origin of resist technology for 193-nm lithography and the current status of 193-nm photoresists, focusing on single-layer resist materials. We emphasize the photoresist design approaches under investigation, compare these with deep-UV (DUV) (248-nm) resist design and materials, and consider possible future lithography processes employing 193-nm lithography. Research and development on 193-nm photoresists by the lithography group at the IBM Almaden Research Center is highlighted.
Yvonne Anne Pignolet, Stefan Schmid, et al.
Discrete Mathematics and Theoretical Computer Science
Maurice Hanan, Peter K. Wolff, et al.
DAC 1976
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Thomas M. Cover
IEEE Trans. Inf. Theory