Phonon transport and thermoelectricity in silicon nanostructures

Abstract

We present both experimental results and a compact model on nanoscale thermal transport in the vicinity of a hot spot in silicon. Effective-local- temperature measurements on the nanoscale are influenced by localized heating effect and a thermal interface resistance, as well as by the spreading resistance in silicon. Ballistic phonon transport is observed for nanoheaters where the interface thermal resistance contribution can be minimized. Thermoelectricity in silicon nanostructures is investigated as a possible route to convert thermal energy into electricity. ©The Electrochemical Society.