Conference paper
Si/SiGe CMOS: Can it extend the lifetime of Si?
K. Ismail
ISSCC 1997
Large-area arrays of parallel quantum wires of 30-80 nm width are achieved using a combination of x-ray lithography, wet chemical etching, and low-pressure metalorganic vapor phase epitaxy. The quantum wires are characterized using low-temperature photoluminescence and magnetotransport measurements. The quantum confinement is reflected in a clear blue shift in the luminescence peak, and in deviation from the periodicity of the Shubnikov-de Haas oscillations as a function of inverse magnetic field.
K. Ismail
ISSCC 1997
J. Liu, W.X. Gao, et al.
Physical Review B
S. Washburn, K. Ismail, et al.
Quantum Effect Physics, Electronics and Applications 1992
M. Arafa, K. Ismail, et al.
IEEE Electron Device Letters