DRC 1999

Organic transistors with low operating voltage and high mobility


Thin film transistors (TFT) comprising pentacene as the semiconductor layer and an amorphous metal oxide gate insulators with a dielectric constant around 16 were fabricated and tested. Field effect mobility values up to 0.6 cm2 V-1 s-1 with subthreshold slopes up to 0.3 V/decade and current modulation higher than 105 were obtained at operating voltages ranging from 4 to 15 V. TFTs fabricated at room temperature on transparent plastic substrates and exhibiting similar transport characteristics were demonstrated.