Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm 2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm 2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm 2/V-s was obtained with the device. Copyright © 2008 American Scientific Publishers All rights reserved.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Imran Nasim, Melanie Weber
SCML 2024