Publication
Applied Physics Letters
Paper

On the establishment of an inversion layer in p- and n-type silicon substrates under conditions of high oxide fields

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Abstract

It has been observed that an inversion layer cannot form in a p-type silicon substrate when the Fowler-Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, for n-type substrates, the formation of the inversion layer is unaffected by the oxide current.

Date

26 Aug 2008

Publication

Applied Physics Letters

Authors

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