J.A. Sheridan, D.M. Bloom, et al.
Optics Letters
It has been observed that an inversion layer cannot form in a p-type silicon substrate when the Fowler-Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, for n-type substrates, the formation of the inversion layer is unaffected by the oxide current.
J.A. Sheridan, D.M. Bloom, et al.
Optics Letters
B. Laikhtman, P. Solomon
Solid State Communications
H. Baratte, D.C. La Tulipe, et al.
IEDM 1985
J. Appenzeller, R. Martel, et al.
Applied Physics Letters