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Sub-40nm V-groove MOSFETs
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DRC 2001
It has been observed that an inversion layer cannot form in a p-type silicon substrate when the Fowler-Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, for n-type substrates, the formation of the inversion layer is unaffected by the oxide current.
J. Appenzeller, R. Martel, et al.
DRC 2001
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Optics Letters
P. Solomon, J.M. Aitken
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IEDM 1989