About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Japanese Journal of Applied Physics
Paper
Nonlinear optical coefficient of alas thin film on gaas substrate
Abstract
We report the first measurement of the nonlinear optical coefficient, d14, at the fundamental wavelength of 1.06 µm, of AlAs grown by molecular beam epitaxy. The d coefficient is deduced from the intensities of second-harmonic waves reflected from an AlAs film grown on GaAs. Multiple reflections in the film and second-harmonic generation in the substrate are taken into account. The ratio d14(AlAs)/d14(GaAs) is found to be 0.23±0.06. © 1992 The Japan Society of Applied Physics.