Vertical-Transport Nanosheet Technology (VTFET) is an attractive solution to enable aggressive CMOS scaling in the sub-45nm contacted gate pitch (CGP) regime. By decoupling the classic tradeoff of S/D contacts, gate length & CGP, VTFET technology overcomes middle-of-the-line (MOL) dominated performance pinch-points by providing independent optimization of the contact dimension & device width as well as significant Ceff reduction . VTFET offers an attractive solution at sub-45nm CGP, however it introduces unique design challenges that need to be optimized to take full power-performance-area (PPA) entitlement. In this paper, we present for the first time a logic standard cell architecture to enable a competitive VTFET technology. First, we introduce key features of the VTFET architecture which enable significant advantages relative to leading-edge competitive technologies. Further we describe key Design Technology Co-Optimization (DTCO) scaling knobs that naturally lend themselves to VTFET such as single fins, buried power rails and gate-contact super vias can achieve competitive area scaling vs. an industry 7nm lateral FinFET transistor reference. Finally, we draw conclusions of overall PPA benefits of this technology.