Multiple functionality in nanotube transistors

Abstract

Calculations of quantum transport in a carbon nanotube transistor were carried out. The calculations showed that the device offered multiple functionality. The device could operate as a ballistic field-effect transistor when scaled to 10 nm dimensions. It was found that at larger gate voltages, channel inversion lead to resonant tunneling and the device operates in the Coulomb blockade regime even at room temperature. The device provided gated resonant tunnelling and negative differential resistance.