Publication
Physical Review Letters
Paper

Mechanisms for peculiar low-temperature phenomena in hydrogenated amorphous silicon

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Abstract

Concepts based on Si H bond breakup (normal strength 3.5 eV) or weakly bonded H have not accounted satisfactorily for many low-temperature phenomena: rapid decrease in the spin signal in the range 25 300?deC while the Si H bond density is conserved or decreases; early H evolution stage at 200 50?deC and H diffuision, both with an activation energy of only 1.5 eV, etc. An elegant microscopic explanation of these and other phenomena is given in terms of a novel mechanism that is unique to the amorphous state: defect-mediated H diffusion during which the defects are annihilated. © 1987 The American Physical Society.

Date

30 Mar 1987

Publication

Physical Review Letters

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