Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Uniaxial stress coefficients have been measured for the H43(1)1D2(1) transition of several Pr3+ centers in CaF2 doped with Pr3+ and D- ions. For the Cs(1) center at 6012.4 A these measurements were made using persistent spectral hole burning. The holes showed a stress shift of 1.8 GHz/kg mm-2. This shift is somewhat inhomogeneous, which limits the magnitude of stress that can usefully be applied. © 1989 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009