Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Uniaxial stress coefficients have been measured for the H43(1)1D2(1) transition of several Pr3+ centers in CaF2 doped with Pr3+ and D- ions. For the Cs(1) center at 6012.4 A these measurements were made using persistent spectral hole burning. The holes showed a stress shift of 1.8 GHz/kg mm-2. This shift is somewhat inhomogeneous, which limits the magnitude of stress that can usefully be applied. © 1989 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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