Publication
IEEE T-ED
Paper

Measurement of MOSFET Channel Potential Profile

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Abstract

A new method for the extraction of the channel potential of a MOSFET from the gate-to-drain capacitance is presented. The method is demonstrated on two devices. Comparison is made between experimental results and numerical simulation. It is shown that a potential drop within the drain diffusion would reduce the actual voltage drop across the channel. A technique to account for this voltage drop is also given. © 1988 IEEE.

Date

01 Jan 1988

Publication

IEEE T-ED

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