Lawrence Suchow, Norman R. Stemple
JES
Atom probe tomography (APT) and transmission electron microscopy (TEM) are used to characterize MgO-based magnetic tunnel junctions in as-deposited and annealed states. The annealing produced giant tunneling magnetoresistance (TMR) values of ∼350%. Upon annealing, Mn diffuses from an IrMn exchange bias layer within the device to one interface of the tunnel barrier layer, while the TMR initially increases. TEM and APT show that Mn does not appear to diffuse into the MgO barrier, but segregates at the CoFe/MgO interface. © 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Lawrence Suchow, Norman R. Stemple
JES
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films