Magnetic tunnel junctions with ZnSe barriers

Abstract

The fabrication of magnetic tunnel junctions with ZnSe barriers with a combination of magnetron sputtering, ion beam sputtering and effusion cell evaporation was discussed. The tunneling magnetoresistance values were ∼10% at room temperature. It was found that the spin polarization through the barrier was about 30.5%. Analysis show that the temperature and barrier thickness dependences of the junction resistance and the tunneling magnetoresistance were consistent with a predominant direct tunneling mechanism when the barrier thickness was less than ∼ 10 nm thick.