J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
The density of interface states at the epitaxial CaF2-Si(111) interface grown under UHV conditions at 700 °C is found to be much lower than assumed previously, as revealed from photoelectron spectroscopy. An upper limit is estimated to be 3 × 1012 cm-2 eV-1 near midgap, which comes close to values obtained for SiO2-Si interfaces.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering