I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
The density of interface states at the epitaxial CaF2-Si(111) interface grown under UHV conditions at 700 °C is found to be much lower than assumed previously, as revealed from photoelectron spectroscopy. An upper limit is estimated to be 3 × 1012 cm-2 eV-1 near midgap, which comes close to values obtained for SiO2-Si interfaces.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids