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Paper
Ledge fluctuations on si(100) stepped surfaces.
Abstract
A fluctuation model for Si(100) monolayer ledges is constructed based on a simple lattice model with ledge, comer and elastic energies obtained from atomistic simulations. SB ledge profiles at various temperatures are generated by Monte Carlo simulation and compared with experiments. The calculated phase diagram of the single- and double-stepped Si(100) surfaces under various temperatures and miscut angles is in agreement with experiments that show the crossover angle is between 1° to 3.5°. © 1991 IOP Publishing Ltd.