Lattice compression from conduction electrons in heavily doped Si:as

Abstract

High-resolution x-ray scattering measurements on heavily doped Si:As (5×1021 As cm-3) show lattice compression relative to pure silicon, aa=-0.0019±0.0003, although extended x-ray-absorption fine-structure measurements show that the As-Si bond length is 0.06±0.02 greater than the usual Si-Si bond length. The overall lattice compression is attributed to increased population of conduction-band states which reduces Si-Si bond lengths. These measurements provide the first direct measurement of the hydrostatic deformation potential for the conduction-band edge in silicon, +3.3±0.7 eV. © 1988 The American Physical Society.