IEEE Electron Device Letters

Inverter Performance Of Deep-Submicrometer Mosfet'S

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Switching delays have been measured in self-aligned, almost fully scaled, liquid-nitrogen temperature operation NMOS inverters, with deep-submicrometer gate lengths. The shortest delay per stage, 13.1 ps, was measured in 0.1-µm gate-length circuits. To date, this is the fastest switching time measured in any circuit that is fabricated with silicon devices. Furthermore, circuit simulations based on the measured device characteristics show that still shorter delay times can be reached with such a technology. This performance should make low-temperature (LT) operation MOSFET's contenders for applications in even the highest speed circuits. © 1988 IEEE