Publication
Solid State Communications
Paper

Intersubband resonances in sosmos accumulation layers

View publication

Abstract

In the stressed system of (100) silicon on sapphire, the primed ladder of subbands forms the electronic ground state of an n-channel accumulation layer. Far infrared resonances corresponding to intersubband transitions perpendicular to the surface have been observed using a Fourier transform spectrometer. The resonance is asymmetrical and composed of the 0′-1′ and probably higher order transitions. © 1983.

Date

01 Jan 1983

Publication

Solid State Communications

Authors

Topics

Share