Paper

Intersubband resonances in sosmos accumulation layers

Abstract

In the stressed system of (100) silicon on sapphire, the primed ladder of subbands forms the electronic ground state of an n-channel accumulation layer. Far infrared resonances corresponding to intersubband transitions perpendicular to the surface have been observed using a Fourier transform spectrometer. The resonance is asymmetrical and composed of the 0′-1′ and probably higher order transitions. © 1983.

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