Si/Si0.85Ge0.15/Si p-type modulation-doped double heterostructures have been grown by the ultrahigh vacuum/chemical vapor deposition technique, and mobility enhancement has been observed at low temperatures. For heterostructures with Si layers doped with boron to ∼1×1019 cm-3, hole mobilities of ∼900 cm2/V s at 14 K have been obtained. No carrier freeze-out behavior has been observed at low temperatures. The existence of two-dimensional hole gas was determined by the tilted-field Shubnikov-de Haas measurement. Both Si/SiGe and SiGe/Si heterointerfaces were found to be equivalent and of excellent interfacial quality. The valence-band maximum of Si0.85Ge 0.15 alloy has been estimated to be ≅0.95 meV higher than that of Si. A hole effective mass of 0.44±0.03m0, which is consistent with the interpolation of the bulk band structures for the Si 0.85Ge0.15 alloy, has been obtained for the heterostructure.