A. Krol, C.J. Sher, et al.
Surface Science
The non-linear I-V characteristics of polysilicon resistors at high electric fields have been extensively studied. I-V measurements over a temperature range from -194 to 144°C were made on resistors fabricated in polysilicon films deposited by either LPCVD or APCVD with boron, phosphorus or arsenic as dopants having concentration in the range from 1 × 1016 to 5 × 1019 cm-3. As doping level decreases below a critical doping concentration N*, I-V curves deviate asymmetrically from a hyperbolicsine function. The number of grains ζNg along the effective conduction path versus doping levels shows downward concavity with its maximum value near N*. ζNg is also a function of measurement temperature. It is shown that such anomalous conduction phenomena cannot be explained by previous uniform grain-size models. This paper presents a non-uniform conduction model which effectively describes the high-field conduction behavior of polysilicon resistors and shows that the non-uniform polycrystalline structure has significant effects on the non-linear I-V characteristics. © 1984.
A. Krol, C.J. Sher, et al.
Surface Science
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials