About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review Letters
Paper
Hot electron scattering processes in metal films and at metal-semiconductor interfaces
Abstract
Ballistic electron emission spectroscopy is used to investigate current attenuations in thin films of Pd/Si, from which the elastic and inelastic mean free paths are uniquely determined. The observed equality of transmission across Pd/Si(100) and Si(111) interfaces is attributed to interface scattering, on the basis of which a current transport model is developed that gives unprecedented agreement with experiment over a wide energy range. © 1993 The American Physical Society.