H.C. Casey Jr., M.B. Panish, et al.
Physical Review
Smooth films of n-In1-xGaxAs and p-GaSb 1-yAsy were grown by molecular beam epitaxy. As a function of the compositions, x and y, the lattice constants vary linearly while the energy gaps show a downward bowing. Abrupt heterojunctions made of these alloys with close lattice matching exhibit a series of current-voltage characteristics which change from rectifying to Ohmic as x and y are reduced. The relative location of the band-edge energies of the two semiconductors at the interface is shown to account for the unusual characteristics observed experimentally.
H.C. Casey Jr., M.B. Panish, et al.
Physical Review
R. Ludeke, A. Bauer, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
L.L. Chang
Solid-State Electronics
J.C. Maan, Y. Guldner, et al.
Surface Science