In this letter, we demonstrate the effectiveness of the controlled spalling technology for producing high-efficiency (28.7) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the as-grown solar cell structure from the host Ge wafer followed by its transfer to an arbitrary Si support substrate. The structural and electrical properties of the thin-film tandem cells were examined and compared against those on the original bulk Ge substrate. The comparison of the electrical data suggests the equivalency in cell parameters for both the thin-film (spalled) and bulk (non-spalled) cells, confirming that the controlled spalling technology does maintain the integrity of all layers in such an elaborate solar cell structure. © 2012 American Institute of Physics.