Graded electronic structure in a 3 nm strained Ge40Si60 quantum well

Abstract

Spatially resolved electron energy loss spectra of the Si 2p core excitation are obtained in transmission through a single cross section of a 3 nm thick Ge40Si60 quantum well. The spectra yield the positions of the L1 and Δ1 conduction band minima, and the biaxial strain splitting of Δ1. From annular dark field images, the well composition appears to be graded over three to four layers on the cap side. The conduction band offset varies from 0 eV at the well edge to +25 meV in the well center, relative to the Si substrate and cap. The biaxial strain splitting is 0.28 eV in the well center and shows an asymmetry with position that is consistent with the annular dark field data. © 1993 The American Physical Society.