Solid State Communications

Paper

01 Jan 1977

Fine structure of indirect exciton in GaP

View publication

Abstract

Wavelenght modulation spectra of the 1s indirect exciton in GaP are reported. Four lines are found which can be easily explained taking into account the "camel's back" structure of the conduction band. An exciton splitting of 0.9 meV- ±0.2 has been measured. © 1977.

Related

Conference paper

Integration of polymer self-assembly for lithographic application

Joy Y. Cheng, Daniel P. Sanders, et al.

SPIE Advanced Lithography 2008

Paper

Interface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficient

R. Ghez, J.S. Lew

Journal of Crystal Growth

Conference paper

Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep

S. Cohen, J.C. Liu, et al.

MRS Spring Meeting 1999

Paper

Crystal structure and cation distribution of MnCrInS₄ from synchrotron powder diffraction data

G. Will, N. Masciocchi, et al.

Zeitschrift fur Kristallographie - New Crystal Structures

View all publications