Conference paper
Novel lithography-independent pore phase change memory
M. Breitwisch, T. Nirschl, et al.
VLSI Technology 2007
The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.
M. Breitwisch, T. Nirschl, et al.
VLSI Technology 2007
T. Nirschl, J.B. Philipp, et al.
IEDM 2007
D.M. Newns, T. Doderer, et al.
Journal of Electroceramics
J. Misewich, P.A. Roland, et al.
Surface Science