Fabrication of an electrical spin transport device utilizing a diazonium salt/hafnium oxide interface layer on epitaxial graphene grown on 6 H-SiC(0001)

Nonlocal Hanle spin precession devices are fabricated on wafer scale epitaxial graphene utilizing conventional and scalable processing methods. To improve spin injection and reduce contact related spin relaxation, hafnium oxide is utilized as an interface barrier between the graphene on SiC(0001) and ferromagnetic metal contacts. The hafnium oxide layer is deposited by atomic layer deposition utilizing an organic seed layer. Spin precession is observed in the epitaxial graphene. © 2012 American Vacuum Society.