About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Explanation of up-conversion and optical storage in CdS: Spatially modulated band structure
Abstract
Red-green up-conversion and optical storage are measured in CdS crystals containing deep impurities such as P, N, Fe, and others. The presence of cadmium vacancies favors the formation of centers of self-activated luminescence which reduce the up-conversion efficiency considerably. Spatial fluctuations of the conduction- and valence-band energies with respect to the Fermi level causes electrons and holes to separate after excitation and to populate distant islands in the crystal. The temperature limit of the up-conversion and storage is determined by the energy barrier between the electron and hole islands.